GBT19001 Grey Tube Targets Magnetron Sputtering Target

Place of Origin Baoji, Shaanxi, China
Brand Name Feiteng
Certification GB/T19001-2016 idt ISO9001:2015 GJB9001C-2017
Model Number Titanium tube target
Minimum Order Quantity To be negotiated
Price To be negotiated
Packaging Details Vacuum package in wooden case
Delivery Time To be negotiated
Payment Terms T/T
Supply Ability To be negotiated
Product Details
Packaging Vacuum Package In Wooden Case Color Shine With Grey Or Dark Grey Metallic Luster
Certification GB/T19001-2016 Idt ISO9001:2015 GJB9001C-2017 Standard ASTM B861-06 A
Shape Tube Place Of Origin Baoji, Shaanxi, China
Application Semiconductor,electronic,displayer,etc Grade Titanium Gr2
High Light

133mm Grey Tube Targets

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GBT19001 Tube Targets

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125mm magnetron sputtering target

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Product Description

Titanium Tube Target Titanium Gr2 ASTM B861-06 a The Target Material Vacuum Coating

Name Titanium tube target
Standard

ASTM B861-06 a

Transport Package

Vacuum package in wooden case

Origin

Baoji, Shaanxi, China

Port of deliver

Xi'an port, Beijing port, Shanghai port, Guangzhou port, Shenzhen port

Size φ133*φ125*2940(include flange)

 

The coating target material is a sputtering source which can form various functional films on the substrate by magnetron sputtering multi-arc ion plating or other types of coating system under appropriate technological conditions. In short, the target is the target material bombarding by high-speed charged particles. When used in high-energy laser weapons, different power densities, output waveforms and wavelengths of lasers interact with different targets, different killing and destruction effects will be produced. For example, evaporation magnetron sputtering coating is heating evaporation coating, aluminum film, etc. Different target materials (such as aluminum, copper, stainless steel, titanium, nickel targets, etc.) can be replaced to obtain different film systems (such as super hard, wear-resistant, anti-corrosion alloy film, etc.)

1) Magnetron sputtering principle:
An orthogonal magnetic field and electric field are added between the sputtered target (cathode) and anode, and the required inert gas (usually Ar gas) is filled in the high vacuum chamber. The permanent magnet forms a 250-350 Gaussian magnetic field on the surface of the target material, which forms an orthogonal electromagnetic field with the high voltage electric field. Under the action of electric field, Ar gas ionization into positive ions and electrons, target and has certain negative pressure, from the action of the target from the extremely affected by magnetic field and increase of working gas ionization probability, form a high density plasma near the cathode, Ar ion under the action of Lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed, The sputtered atoms on the target follow the principle of momentum conversion and fly away from the target surface with higher kinetic energy to the substrate and accumulate into film. Magnetron sputtering is generally divided into two kinds: DC sputtering and radio frequency sputtering, which dc sputtering equipment principle is simple, in sputtering metal, its rate is fast. The use of rf sputtering is more extensive, in addition to sputtering conductive materials, can also sputter non-conductive materials, but also can be reactive sputtering oxide, nitride and carbide and other compound materials. If the frequency of the radio frequency becomes microwave plasma sputtering, today, the commonly used electron cyclotron resonance (ECR) microwave plasma sputtering.
2) Type of magnetron sputtering target:
Metal sputtering target material, coating alloy sputtering coating material, ceramic sputtering coating material, boride ceramic sputtering target materials, carbide ceramic sputtering target material, fluoride ceramic sputtering target material, nitride ceramic sputtering target materials, oxide ceramic target, selenide ceramic sputtering target material, silicide ceramic sputtering target materials, sulfide ceramic sputtering target material, telluride ceramic sputtering target material, Other ceramic targets, chrome-doped silicon oxide ceramic target (CR-SiO), indium phosphate target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).

 

 

Main advantages
Low density high specification strength
Custom request customization
Excellent corrosion resistance
Good heat resistance
Excellent low temperature performance
Good thermal properties
Low elastic modulus